 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 PMLL4150; PMLL4151; PMLL4153 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification High-speed diodes FEATURES * Small hermetically sealed glass SMD package * High switching speed: max. 4 ns * General application * Continuous reverse voltage: max. 50 V * Repetitive peak reverse voltage: max. 75 V * Repetitive peak forward current: max. 600 mA and 450 mA respectively. APPLICATIONS * High-speed switching * The PMLL4150 is primarily intended for general purpose use in computer and industrial applications. * The PMLL4151 and PMLL4153 are intended for military and industrial applications. handbook, 4 columns PMLL4150; PMLL4151; PMLL4153 DESCRIPTION The PMLL4150, PMLL4151, PMLL4153 are high-speed switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. k a MAM061 Cathode indicated by black band. Fig.1 Simplified outline (SOD80C) and symbol. 1996 Sep 18 2 Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage PMLL4151 PMLL4153 VR IF continuous reverse voltage continuous forward current PMLL4150 PMLL4151 PMLL4153 IFRM repetitive peak forward current PMLL4150 PMLL4151 PMLL4153 IFSM non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 4 1 0.5 500 +200 200 A A A mW C C - - - 600 450 450 mA mA mA see Fig.2; note 1 - - - 300 200 200 mA mA mA - - - 75 75 50 V V V CONDITIONS MIN. MAX. UNIT 1996 Sep 18 3 Philips Semiconductors Product specification High-speed diodes ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage PMLL4150 see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA PMLL4151 PMLL4153 IF = 50 mA IF = 0.1 mA IF = 0.25 mA IF = 1 mA IF = 2 mA IF = 10 mA IF = 50 mA IR reverse current PMLL4150 PMLL4151 PMLL4153 IR reverse current PMLL4150 PMLL4151 PMLL4153 Cd diode capacitance PMLL4150 PMLL4151 PMLL4153 PMLL4150; PMLL4151; PMLL4153 CONDITIONS MIN. 540 660 760 820 870 - 490 530 590 620 700 740 - - - MAX. 620 740 860 920 1000 1000 550 590 670 700 810 880 0.1 UNIT mV mV mV mV mV mV mV mV mV mV mV mV A VR = 50 V; see Fig.5 0.05 A 0.05 A 100 50 50 2.5 2 2 A A A pF pF pF VR = 50 V; Tj = 150 C; see Fig.5 - - - f = 1 MHz; VR = 0; see Fig.6 - - 1996 Sep 18 4 Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 SYMBOL trr PARAMETER reverse recovery time PMLL4150 CONDITIONS when switched from IF = 10 mA to IR = 1 mA; RL = 100 ; measured at IR = 0.1 mA; see Fig.7 when switched from IF = 10 mA to 200 mA to IR = 10 mA to 200 mA; RL = 100 ; measured at IR = 0.1 x IF; see Fig.7 when switched from IF = 200 mA to 400 mA to IR = 200 mA to 400 mA; RL = 100 ; measured at IR = 0.1 x IF; see Fig.7 MIN. - - MAX. 6 4 UNIT ns ns - 6 ns trr reverse recovery time PMLL4151 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 - - 4 2 ns ns trr reverse recovery time PMLL4153 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 - - 4 2 ns ns tfr forward recovery time when switched to IF = 200 mA; tr = 0.4 ns; measured at VF = 1 V; see Fig.8 - 10 ns THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 300 350 UNIT K/W K/W 1996 Sep 18 5 Philips Semiconductors Product specification High-speed diodes GRAPHICAL DATA 400 MBG456 PMLL4150; PMLL4151; PMLL4153 handbook, halfpage IF (mA) 300 (1) handbook, halfpage 600 MBG464 IF (mA) 400 200 (1) (2) (3) (2) 100 200 0 0 100 Tamb (oC) 200 0 0 (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. (1) PMLL4150. (2) PMLL4151; PMLL4153. Fig.0 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10 102 103 tp (s) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 18 6 Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 103 handbook, halfpage IR (A) MGD006 MGD004 handbook, halfpage 1.2 10 2 Cd (pF) 1.0 (1) (2) (3) 10 0.8 1 10-1 0.6 10-2 0 100 Tj (oC) 200 0.4 0 10 VR (V) 20 (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 18 7 Philips Semiconductors Product specification High-speed diodes PMLL4150; PMLL4151; PMLL4153 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) The value of IR is dependent on product type. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% 1.0 VF (V) R = 50 S D.U.T. OSCILLOSCOPE R i = 50 10% MBH181 Vfr t tr tp tfr t input signal output signal Input signal: forward pulse rise time tr = 0.4 ns; forward pulse duration tp = 100 ns; duty factor = 0.01. Fig.8 Forward recovery time test circuit and waveforms. 1996 Sep 18 8 Philips Semiconductors Product specification High-speed diodes PACKAGE OUTLINE PMLL4150; PMLL4151; PMLL4153 handbook, full pagewidth 1.60 O 1.45 0.3 3.7 3.3 0.3 MBA390 - 2 Dimensions in mm. Fig.9 SOD80C. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 18 9 |
Price & Availability of PMLL4150
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |